透射式GaAs光电阴极AlGaAs/GaAs外延层倒易点二维图分析  

THE ANALYSIS ON THE RECIPROCAL SPACE MAPPING OF THE AlGaAs/GaAs EPITAXIAL LAYER IN THE TRANSPARENT GaAs PHOTOCATHODE

作　　者：李晓峰[1] 张景文[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所光电子学研究室,西安710068

出　　处：《光子学报》2002年第3期312-316,共5页Acta Photonica Sinica

摘　　要：本文介绍了摇摆曲线和倒易点二维图在评价晶格完整性时的特点 ,分析了透射式Ga As光电阴极样品 Al Ga As/Ga As外延层的倒易点二维图 ,获得了晶面弯曲以及Al Ga As外延层中 Al组份变化等方面的信息 ,为优化外延工艺提供了可靠的保证 .This paper illustrated the characteristics of rocking curve and reciprocal space mapping respectively.Through analysising on the reciprocal space mapping of AlGaAs/GaAs epitaxial layer of transparent GaAs photocathode,the deforming informations of the lattice and composition of the AlGaAs/GaAs epitaxial layer were obtained.This helps to optimize the MOCVD growth procedure of AlGaAs/GaAs epitaxial layer.

关 键 词：ALGAAS/GAAS X射线衍射 光电阴极 倒易点二维图 砷化镓 透射式GAAS光电阴极 外延层 镓铝砷化合物 

分 类 号：TN103[电子电信—物理电子学] O462[理学—电子物理学]