SiC微加工工艺及其在高温电容压力传感器中的应用研究进展  

Research progress of SiC micro-fabrication process and its application in high-temperature capacitive pressure sensor

作　　者：余开庆 程萍[1,2,3] 丁桂甫 Roya MABOUDIAN[3] 赵小林 姚景元 YU Kai-qing;CHENG Ping;DING Gui-fu;Roya MABOUDIAN;ZHAO Xiao-lin;YAO Jing-yuan(National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai Jiao Tong University,Shanghai 200240,China;Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Berkeley Sensor &Actuator Center,University of California,Berkeley,CA 94720,United States)

机构地区：[1]上海交通大学微米/纳米加工技术重点实验室,上海200240 [2]上海交通大学电子信息与电气工程学院微纳电子学系,上海200240 [3]美国加州大学伯克利分校伯克利传感器与执行器中心,美国加州94720

出　　处：《传感器与微系统》2018年第12期1-4,12,共5页Transducer and Microsystem Technologies

摘　　要：综述了碳化硅(SiC)材料的薄膜沉积、刻蚀、减薄、键合、欧姆接触等微加工工艺,并以SiC高温电容压力传感器为典型应用,介绍了SiC高温压力传感器的研究现状。Micromachining technique of thin-film deposition,etching,thinning,bonding,and ohmic contact of silicon carbide(SiC)materials are reviewed.The research status of high temperature capacutuve pressure sensors based on SiC is introduced,taking SiC high temperature capacitive pressure sensor for a typical application.

关 键 词：碳化硅 微加工工艺 高温 电容压力传感器 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]