深亚微米槽栅PMOSFET短沟道效应的模拟研究  

The influence of doping density on the short-channel-effect immunity in the deep-sub micron grooved gate PMOSFET

作　　者：任红霞[1] 马晓华[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《西安电子科技大学学报》2002年第2期149-152,共4页Journal of Xidian University

基　　金：国家部委预研基金资助项目 ( 99J8 1 1 DZD132 ) ;高等院校博士点基金资助项目 ( 80 70 110 )

摘　　要：基于流体动力学能量输运模型 ,首先研究了槽栅器件对短沟道效应的抑制作用 ,接着研究了不同衬底和沟道杂质浓度的深亚微米槽栅PMOSFET对短沟道效应抑制的影响 ,同时与相应平面器件的特性进行了对比 .研究结果表明 ,槽栅器件在深亚微米和超深亚微米区域能够很好地抑制短沟道效应 ,且随着衬底和沟道掺杂浓度的升高 ,阈值电压升高 ,对短沟道效应的抑制作用增强 ,但槽栅器件阈值电压变化较平面器件小 .最后从内部物理机制上对研究结果进行了分析和解释 .Based on the hydrodynamic energy transport model, the short channel effect immunity in the deep sub micron grooved gate PMOSFET is studied together with the influences of substrate and channel doping density on that effect immunity. At the same time, the results are compared with those from corresponding conventional planar devices and they manifest that the short channel effect can be depressed deeply for grooved gate devices in the deep sub micron and super deep sub micron region, and with the increase of substrate and channel doping density, the threshold voltage rises and short channel effect is diminished. But the variation of the threshold voltage in grooved gate devices is smaller than that in planar devices. Finally, the results are explained based on the interior physics mechanism in devices.

关 键 词：深亚微米 槽栅PMOSFET 短沟道效应 场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学]