氮化铁薄膜的制备及其磁电阻效应  

MAGNETORESISTANCE OF Fe-N FILM PREPARED BY REACTIVE MAGNETRON SPUTTERING

作　　者：陈红霞[1] 徐秀莲[1] 曾祥华[1] 陈允鸿[1] 

机构地区：[1]扬州大学理学院物理学系,扬州大学复杂性科学中心,江苏扬州225002

出　　处：《扬州大学学报（自然科学版）》2002年第1期27-29,共3页Journal of Yangzhou University：Natural Science Edition

基　　金：江苏省教委自然科学基金资助项目 (0 0 KJB140 0 10 ) ;国家自然科学基金资助项目 (6 0 0 72 0 32;79970 12 1)

摘　　要：用磁控反应溅射法制备了铁和氮化铁薄膜 ,分别测出其 X射线衍射谱 ( XRD) ,分析表明存在氮化铁薄膜 .在室温下测量了制备态和退火样品的磁电阻 。Using the reaction magnetron sputtering technique, the samples of the thin film Fe and FeN have been prepared, respectively. From the analysis of XRD spectra, the FeN thin film is found to be exist. The magnetoresistance (MR) has been measured under room temperature before and after annealing, the result shows that after annealing the MR is enhanced.

关 键 词：阴极溅射 氮化铁薄膜 磁膜 磁致电阻 磁电阻效应 磁控溅射法 磁感应强度 

分 类 号：O484.43[理学—固体物理]