注F短沟MOSFET的抗热载流子损伤特性  

Hot-carrier Damage Resistant Characteristics in Fluorinated Short-channel MOSFET

作　　者：韩德栋[1] 张国强[1] 余学峰[1] 任迪远[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《固体电子学研究与进展》2002年第1期29-31,44,共4页Research & Progress of SSE

摘　　要：研究了用注 F工艺制作的短沟 MOSFET的热载流子效应。实验结果表明 ,在栅介质中注入适量的 F能够明显地减小由热载流子注入引起的阈电压漂移、跨导退化和输出特性的变化。分析讨论了Hot carrier effects in fluorinated short channel MOSFET have been investigated. The experimental results have shown that by incorporating a minute amount of fluorine into internal SiO 2, the generation of interface states and oxide trapped charges can be suppresed to improve the shift of threshold voltage and degradation of transconductance. The mechanism of hot carrier damage have been analyzed.

关 键 词：氟 金属-氧化物-半导体场效应晶体管 热载流子 损伤特性 离子注入 

分 类 号：TN386.1[电子电信—物理电子学]