铜布线工艺中阻挡层钽膜的研究  

Properties of Ta Film as Diffusion Barrier in the Copper Metallization

作　　者：庞恩文[1] 林晶[1] 汪荣昌[1] 戎瑞芬[1] 宗祥福[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《固体电子学研究与进展》2002年第1期78-81,共4页Research & Progress of SSE

基　　金：国家自然科学基金重点项目资金资助 (项目编号 :6983 60 3 0 )

摘　　要：从钽膜质量的角度研究了用溅射方法在硅衬底上得到的 60 nm钽膜对铜硅互扩散的阻挡效果 ,钽膜的质量通过对硅衬底的表面处理以及钽膜的淀积速率来控制。研究发现 ,适当的硅衬底表面处理对钽膜是否能产生良好的防扩散能力起着关键的作用。本研究还得到了能有效阻挡铜硅接触的钽膜的淀积速率。This work studied the barrier properties of the 60 nm Tantalum (Ta) film sputtered on the Si substrate to against the interdiffusion of Si and copper (Cu). The quality of the Ta film was controlled by the cleaning process of Si substrate and the deposit rate of Ta film. It was found that to clean the Si substrate properly was essential to a good diffusion barrier. The deposit rate of the Ta film for efficiently obstructing the contact of Si and Cu was also got.

关 键 词：铜布线 扩散阻挡层 钽 薄膜 

分 类 号：TN405.97[电子电信—微电子学与固体电子学] TN304.055