电沉积Al_xGa_(1-x)As薄膜及性能研究  

Study on co-electrodeposition of tri-compound Al_xGa_(1-x)As films

作　　者：韩爱珍[1] 王喜莲[1] 高元凯[1] 

机构地区：[1]哈尔滨工业大学,哈尔滨150001

出　　处：《功能材料与器件学报》2002年第1期13-17,共5页Journal of Functional Materials and Devices

摘　　要：利用电共沉积技术,在简单盐和带有络合剂的盐酸溶液中,制备了AlxGa1-xAs三元化合物薄膜。用能谱分析仪测量了薄膜成分,分析结果表明,该膜为符合化学计量比的三元化合物AlxGa1-xAs半导体材料,用分光光度计对膜进行测量,在较宽光波波段获得一定的透射率。Tri-compound AlxGa1-xAs films was prepared by using electrodeposition technology in simple salt solution with additives citric acid. The composition of the deposited films was measured by SEM-EDS. The result shows that approximately stoichiometric Al0.3Ga0.7As tri-compound semicon- ductor materials is obtained. As the films are measured by spectrophotometer, certain transmissivity is obtained in a wide range of light wave band.

关 键 词：电共沉积 三元化合物 半导体薄膜 砷化镓 性能 镓铝砷化合物 

分 类 号：TN304.26[电子电信—物理电子学]