MBE生长GaAlAs/GaAs量子阱激光器材料的光谱和结构特性研究  

A STUDY OF PHOTOLUMINESCENCE AND THE STRUCTURAL CHARACTERISTICS OF GaAlAs/GaAs QUANTUM WELL LASERS

作　　者：李梅[1] 宋晓伟[1] 王晓华[1] 张宝顺[1] 李学千[1] 

机构地区：[1]长春光学精密机械学院高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《兵工学报》2001年第3期355-358,共4页Acta Armamentarii

摘　　要：本文用低温光致荧光 (PL )谱及 X射线双晶衍射方法对 MBE方法生长的 Ga Al As/Ga As(1 0 0 )量子阱结构材料进行了测试分析。结果表明 ,在材料生长过程中 ,深能级的引入严重影响了材料的光学特性及界面完整性。通过改变衬底温度、 / 速流比等实验条件 ,得到了质量较好的材料 ,低温光致荧光峰的半峰宽达到 1 .7me V,双晶衍射峰的半峰宽为 9.6 8″.同时对实验样品的双晶衍射回摆曲线中干涉条纹及峰的劈裂现象进行了理论分析 ,并利用 PL谱将深能级对材料、器件性能的影响做了有益的讨论。High quality GaAlAs/GaAs quantum well (QW) structure grown on a (100) GaAs substrate by molecular beam epitaxy(MBE) system is characterized by photoluminescence (PL) and X-ray double crystal diffraction. Interferance fringes and splitting peaks in double crystal rocking curves are analysed theoretically. The deep energy levels in affecting the characteristics of materials and lasers are also discussed. The experimental results show that the use of photoluminescence and X-ray double crystal diffraction are very important in testing the quality of quantum wells and improving the molecular beam epitaxy technology.

关 键 词：MBE生长 GaAlAs/GaAs量子阱激光器 分子束外延 双晶衍射 

分 类 号：TN248.4[电子电信—物理电子学]