脉冲应力增强的NMOSFET′s热载流子效应研究  

Study on Pulse Stress Enhanced Hot-Carrier Effects in NMOSFET′s

作　　者：刘红侠[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《电子学报》2002年第5期658-660,共3页Acta Electronica Sinica

基　　金：国家 8 63资助项目 (No .863 SOC Y 3 6 1 )

摘　　要：本文研究了交流应力下的热载流子效应 ,主要讨论了脉冲应力条件下的热空穴热电子交替注入对NMOSFET′s的退化产生的影响 .在脉冲应力下 ,阈值电压和跨导的退化增强 .NMOSFET′s在热空穴注入后 ,热电子随后注入时 ,会有大的退化量 ,这可以用中性电子陷阱模型和脉冲应力条件下热载流子注入引起的栅氧化层退化来解释 .本文还定量分析研究了NMOSFET′s退化与脉冲延迟时间和脉冲频率的关系 ,并且给出了详细的解释 .在脉冲应力条件下 。Hot carrier effects under AC(Alternating Current)stress are investigated in this paper.Alternative hot hole and hot electron injection effects on the degradation of NMOSFET′s under pulse stress are discussed mainly.Enhanced degradation appears in both threshold voltage and transconductance under pulse stress.NMOSFET′s after hot hole injection followed by hot electron injection produce serious degradation,which can be explained by neutral electron trap model and hot carrier induced gate oxide degradation under pulse stress.The pulsed delay time and pulse frequency effects on NMOSFET′s degradation are investigated and analyzed quantitatively,and a detailed explanation is also given out.Under pulse stress,the hot carrier induced device degradation is caused by the cooperation of hot holes at low voltage and hot electrons at high voltage.

关 键 词：脉冲应力增强 NMOSFET 热载流子效应 

分 类 号：TN386.1[电子电信—物理电子学]