一种新颖的DC-50GHz低插入相移MMIC可变衰减器  

A Novel MMIC Variable Attenuator with Low Inserted Phase Shift over DC-50GHz

作　　者：戴永胜[1] 陈堂胜[1] 俞土法[1] 刘琳[1] 杨立杰[1] 陈继义[1] 陈效建[1] 林金庭[1] 

机构地区：[1]南京电子器件研究所,江苏南京210016

出　　处：《电子元器件应用》2002年第1期16-18,共3页Electronic Component & Device Applications

摘　　要：介绍了一种新颖的DC-50GHz低相移、多功能的GaAs MMIC可变衰减器的设计与制作,获得了优异的电性能。微波探针在片测试结果为:在DC-50GHz频带内,最小衰减≤3.8dB,最大衰减≥35±5dB,最小衰减时输入/输出驻波≤1.5,最大衰减时输入/输出驻波≤2.2,衰减相移比≤1.2°/dB。芯片尺寸为2.33mm×0.68mm×0.1mm。芯片成品率高达80%以上,工作环境温度达125℃,可靠性高,稳定性好。Design, fabrication and performance of a novel multi-function low phase shift DC-50GHz MMIC voltage control variable attenuator are introduced in this paper. High performance has been obtained. Over DC-50GHz, test results by on-wafer microwave probe system are: minimum attenuation ≤ 3. 8dB, maximum attenuation ≥ 35 ±5dB, input/output VSWR at minimum attenuation≤ 1. 5, input/output VSWR at maximum attenuation≤2. 2, phase shift attenuation≤ 1. 2°/ dB. The chip size is 2. 33mm × 0. 68mm × 0. 1mm. The yield of the chips is over 80%. Its operation environmental temperature is 125℃ and it has high reliability and stability.

关 键 词：砷化镓 集成电路 移动通信 相移 可变衰减器 可靠性 

分 类 号：TN929.5[电子电信—通信与信息系统] TN715[电子电信—信息与通信工程]