固溶体技术用于AlN-SiC微波衰减材料改性  

Modification of microwave attenuation of AlN-SiC with solid solution technique

作　　者：步文博[1] 丘泰[1] 徐洁[1] 李晓云[1] 沈春英[1] 

机构地区：[1]南京工业大学材料科学与工程学院,江苏南京210009

出　　处：《南京工业大学学报（自然科学版）》2002年第3期10-14,共5页Journal of Nanjing Tech University(Natural Science Edition)

基　　金：国防科工委重点科研项目

摘　　要：结合AlN SiC二元系相图的理论分析 ,提出了利用固溶体技术实现AlN SiC微波衰减材料性能优化的研究思路 ;采用热压烧结工艺 ,通过合理的烧结温度及保温时间的控制 ,制备了性能优异的AlN SiC微波衰减材料。通过XRD、SEM、网络分析仪等测试手段 ,研究了材料的显微结构 (晶粒尺寸和晶粒形状等 )对材料微波衰减性能的影响 ,结果表明 ,AlN SiC局部固溶体具有广频衰减特性 ,而AlN SiC均质固溶体具有选频衰减特性 ;并初步探讨了AlNCombining a theoretical analyze of the AlN SiC phase diagram, a new idea to improve the microwave attenuation performance of AlN SiC composites with the solid solution technique was proposed. AlN SiC solid solutions with excellent microwave attenuation performances were prepared by hot pressing under the reasonable controls of sintering temperature and soaking time with the AlN SiC composite ultrafine powder as starting powder. The effect of microstructure(crystallite size and shape)of the prepared materials on the microwave attenuation performance was studied by XRD, SEM and network analyzer. The results showed that the AlN SiC inhomogeneous solid solution possessed the wide frequency microwave attenuation performance, while the AlN SiC homogeneous solid solution possessed the narrow frequency microwave attenuation performance. The microwave attenuation mechanisms of AlN SiC solid solutions was discussed.

关 键 词：ALN SIC 微波衰减 固溶体技术 半导体器件 优化改性 碳化硅 氮化铝 复相陶瓷 

分 类 号：TM25[一般工业技术—材料科学与工程] TN303[电气工程—电工理论与新技术]