NH_3分解率对GaN半导体MOVPE外延生长成分空间的影响  

Effect of NH_3 Pyrolysis Rate on Composition Region for MOVPE Growth of GaN Semiconductor

作　　者：李长荣[1] 卢琳[1] 杜振民[1] 张维敬[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《稀有金属》2002年第4期241-244,共4页Chinese Journal of Rare Metals

基　　金：国家863计划(7150100032 );国家自然科学基金资助项目 (5 0 0 710 0 8)

摘　　要：研究了以三甲基镓 (TMGa)和氨 (NH3 )为气源物质 ,以氢气 (H2 )为载气进行GaN半导体的金属有机物气相外延 (MOVPE)生长时 ,NH3 分解率对于GaN半导体外延生长的成分空间的影响。热力学计算结果表明 :随着NH3分解率的提高 ,用于生长GaN外延层的气 +固两相区逐渐向高Ⅴ /Ⅲ比方向变小 ,解释了实际生长过程中Ⅴ /Ⅲ比要求很高的原因。预计高的Ⅴ /Ⅲ比及低的NH3 分解率有助于GaN的MOVPE外延生长。The effect of NH 3 pyrolysis rate on the composition region necessary to grow GaN epilayer was studied thermodynamically with the trimethyl gallium (Ga(CH 3) 3) and the ammonia (NH 3) as the source gases and the hydrogen (H 2) as the carrier gas for MOVPE process. The results indicated that the gas +nitride two phase region essential for the growth of GaN epilayer becomes narrowed as the increase of NH 3 pyrolysis rate. This explained the high value of Ⅴ/Ⅲ ratio during the practical growth process. This analysis also implied that the high Ⅴ/Ⅲ ratio and the low NH 3 pyrolysis rate might possibly facilitate the MOVPE growth of GaN epitaxy layer.

关 键 词：热力学分析 氮化镓 MOVPE 

分 类 号：TN304.2[电子电信—物理电子学]