杂质浓度对槽栅PMOSFET抗热载流子特性的影响  

Influence of Doping Density on Hot-carrier-effect in Grooved Gate PMOSFET

作　　者：任红霞[1] 荆明娥[1] 郝跃[1] 

机构地区：[1]西安电子科技大学微电子研究所,710071

出　　处：《固体电子学研究与进展》2002年第2期174-180,共7页Research & Progress of SSE

基　　金：国防预研基金 (编号 :99J8.1.1.DZD13 2 );高等院校博士点基金资助项目 (编号 :80 70 110 )

摘　　要：基于流体动力学能量输运模型 ,利用二维仿真软件 Medici研究了深亚微米槽栅 PMOS器件衬底和沟道掺杂浓度对器件抗热载流子特性的影响 ,并从器件内部物理机理上对研究结果进行了解释。研究发现 ,随着沟道杂质浓度的提高 ,器件的抗热载流子能力增强 ;而随着衬底掺杂浓度的提高 ,器件的抗热载流子性能降低。这主要是因为这些结构参数影响了电场在槽栅 MOS器件内的分布和拐角效应 。Based on the hydro-dynamics energy transport model, the influence of channel and substrate doping densities on hot-carrier-effect immunity in deep-sub-micron grooved gate PMOSFET is studied and explained in terms of device interior physics mechanism. The research results indicate that with the increase of doping density in channel, the hot-carrier-effect immunity becomes better. While as doping density in substrate rises, the hot-carrier-effect immunity becomes worse. Those mean that because the electric field distribution and corner effect in device are influenced by the structure parameters and so is the transportation of carriers as well as the hot-carrier-effect.

关 键 词：杂质浓度 槽栅PMOSFET 抗热载流子 深亚微米 P型槽栅金属氧化物半导体场效应晶体管 拐角效应 

分 类 号：TN386[电子电信—物理电子学] TN303.12