AlAs氧化层的Raman研究  

The Raman Study of AlAs Oxidation Layers

作　　者：王文冲[1] 贾海强[1] 陈弘[1] 王文新 李卫[1] 黄绮[1] 周均铭[1] 

机构地区：[1]中国科学院物理研究所凝聚态物理中心,北京100080

出　　处：《固体电子学研究与进展》2002年第2期193-194,214,共3页Research & Progress of SSE

摘　　要：利用 Nomarski光学显微镜和 Raman光谱仪对分子束外延生长的 Al As层热氧化进行了系统的研究。对未氧化 ,氧化及氧化加原位退火的样品分析表明 ,目前氧化热稳定性差的主要因素是随氧化进行而产生的可挥发性产物如 As、As2 O3在氧化层中的残留量。在此分析的基础上 ,优化了氧化条件 ,使 Al As氧化的热稳定性有了质的提高 ,可以经受较高温度的退火 ,并消除了氧化层与两边 GaThe Molecular Beam Epitaxy (MBE) grown AlAs layer sandwiched between GaAs was systematically studied by Raman spectrum and Nomarski microscopy. By analysis from the un oxidized and oxidized samples in situ with and without annealing, it was found that the thermal stability of the samples was very dependent on the removal of the volatile productions such as As and As 2O 3. By optimizing oxidation conditions, we obtained the oxidation layers with good thermal stability of bearing with annealing at higher temperature without cracking.

关 键 词：RAMAN 分子束外延 砷化铝 氧化 分子束外延 热稳定性 退火 崩裂 

分 类 号：TN304.2[电子电信—物理电子学] TN304.054