GaN_(1-x)P_x三元合金的MOCVD生长  

GaN_(1-x)P_xTernary Alloy Grown by Metal-Organic Chemical Vapor Deposition

作　　者：陈敦军[1] 毕朝霞[1] 沈波[1] 张开骁[1] 顾书林[1] 张荣[1] 施毅[1] 胡立群[1] 郑有炓[1] 孙学浩[2] 万寿科[2] 王占国[2] 

机构地区：[1]南京大学物理系,南京210093 [2]中国科学院半导体研究所半导体材料科学重点实验室,北京100083

出　　处：《Journal of Semiconductors》2002年第7期782-784,共3页半导体学报（英文版）

基　　金：国家重点基础研究专项 (编号 :G2 0 0 0 0 6 83);国家自然科学基金 (批准号 :6 0 136 0 2 0 ;6 9976 0 14 ;6 99870 0 1);国家高技术研究发展计划资助项目~~

摘　　要：用金属有机化学气相淀积技术在蓝宝石衬底上成功外延了高P组分的GaN1-xPx 三元合金 .俄歇电子能谱深度剖面结果表明在GaN1-xPx 中P的掺入量最高达到 2 0 %且分布均匀 ;X射线光电子能谱价态分析证实了外延层中Ga—P键的存在 .对不同P组分的GaN1-xPx 样品进行了低温光致发光 (PL)测试 ,与来自GaN衬底的带边发射相比 ,随三元合金中P组分的变化 ,GaN1-xPx 的PL峰呈现出了不同程度的红移 .在GaN1-xPx 的PL谱中没有观测到有关GaP的发射峰 ,表明该合金材料没有发生相分离 .GaN 1-x P x ternary alloys with large composition ratios are successfully grown by means of metal organic chemical vapor deposition.Depth profiles of the elements in GaN 1-x P x layers show that a maximum P composition ratio is up to 20% and the P atoms are distributed uniformly in the GaN 1-x P x films.Examinations of the chemical states between P and Ga demonstrate the presence of Ga-P bond using X ray photoelectron spectroscopy in GaN 1-x P x layer.Photoluminescence spectra for GaN 1-x P x layers with P composition ratios of 11%,15% and 20% show the redshifts of 77,100 and 87meV,respectively,from that of GaN.No peak related to GaP is observed,indicating that the phase separation between GaN and GaP does not occur in the GaN 1-x P x alloys.Key words:GaN 1-x P x ;MOCVD;chemical state;redshift phase interface, and the orientation relationship between Al 3Ti and α (Al) is (006) Al 3Ti ∥ (02-2) Al , -22] Al 3Ti ∥ Al 3Ti ∥-0] Al . The strengthening mechanisms of Al 3Ti/ZL101 in situ composite is proved to be caused by fine grain size, spreading distribution and dislocation multiplication. Al . The strengthening mechanisms of Al 3Ti/ZL101 in situ composite is proved to be caused by fine grain size, spreading distribution and dislocation multiplication.

关 键 词：三元合金 MOCVD 化学态 红移 镓氮磷合金 气相沉积 

分 类 号：TN304.055[电子电信—物理电子学]