浮栅ROM器件γ辐射效应实验研究  

Experimental study on γ irradiation effects of floating gate ROMs

作　　者：贺朝会[1] 耿斌[1] 陈晓华[1] 王燕萍[1] 彭宏论[1] 

机构地区：[1]西北核技术研究所,陕西西安69信箱13分箱710024

出　　处：《核电子学与探测技术》2002年第4期344-347,共4页Nuclear Electronics & Detection Technology

摘　　要：给出了浮栅 ROM器件的γ辐照效应实验结果。器件出现错误有个累积剂量阈值 ,当累积剂量小于某一值时 ,无数据错误。当累积剂量达到一定值时 ,开始出现数据错误。随着累积剂量的增加 ,错误数增加 ,动态监测和静态加电的器件都出现数据错误 ,且不能用编程器重新写入数据。然而不加电的器件在更高的累积剂量辐照下未出现错误 ,而且可以用编程器重新写入数据。Experimental results of γ irradiation effects are given for Floating gate ROMs. There is an accumulated dose threshold. Errors occur when accumulated dose is above the threshold, no error occurs when below the threshold. The errors go up with the increase of the accumulated dose . Errors occur in devices that are measured during irradiation and irradiated in power on, moreover, new data cannot be written in these devices with programmer. However, under more accumulated dose, there is no error in devices in power off mode and new data can be written in these devices with programmer.

关 键 词：浮栅ROM器件 γ辐射效应 实验研究 总剂量效应 钴60 γ源 只读存储器 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O571.33[自动化与计算机技术—计算机科学与技术]