VDMOSFET导通电阻的最佳化设计  

OPTIMAL DESIGN OF ON-STATE RESISTANCE FOR VDMOSFET

作　　者：高雅君[1] 

机构地区：[1]辽宁大学物理系,沈阳110036

出　　处：《飞机设计》2002年第2期48-51,共4页Aircraft Design

摘　　要：分析了VDMOSFET导通电阻模型 ,提出了单胞尺寸是影响导通电阻的最重要因素。单胞尺寸的最佳化选择可使器件的特征导通电阻RonA(单位面积导通电阻 )最小 ,并通过大量理论计算给出击穿电压为5 0V时的最佳单胞尺寸。The important factor of the effects of on-state resistance of cell dimention is presented through the analysis of the model for VDMOSFET'S on-state resistance. Through the optimal election of cell dimension,the smallest special on-state resistance R onA (the on-state resistance of unit area) is obtained.In the meantime,the optimal cell dimention of BV DS =50 V is also given after large theoretical caculations.

关 键 词：导通电阻 设计 VDMOSFET 特征电阻 单胞尺寸 

分 类 号：TN301[电子电信—物理电子学]