L波段高效率内匹配GaN HEMT  

L Band High Efficiency Intermatching GaN HEMT

作　　者：银军 武继斌[2] 张志国[2] 高学邦 吴洪江 

机构地区：[1]中国电子科集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2014年第7期512-515,共4页Semiconductor Technology

摘　　要：研究了一种基于国产SiC衬底的L波段GaN高效率内匹配器件。利用在片微波测试和直流测试相结合方法获得器件的小信号模型,外推得到大信号模型,并进行负载牵引方法验证。在此基础上设计两胞匹配电路,采用电感-电容匹配网络,器件阻抗提升到12Ω,利用改进型威尔金森功率分配器和功率合成器将阻抗由12Ω提升到50Ω,功率分配器和匹配电容使用高Q值陶瓷基片加工。研制的内匹配GaN HEMT器件在测试频率为1.20～1.32 GHz时,输出功率大于80 W,功率增益大于16.2 dB,最大功率附加效率达到72.1%。A L-band intermatching GaN HEMT with high efficiency based on the domestic SiC substrate was studied. The small-signal model of the GaN HEMT was obtained with the combination of the microwave and DC on chip measurement. Besides that,the large-signal model was extrapolated,and was proved by the loadpull method. Based on the model,the matching circuit of two cells was designed,the impedance of the device was elevate to 12 Ω with the inductance-capacitance networks,and by the advanced Wilkinson power dividers and combiners fabricated with the high Q ceramic substrate,the impedance was upgraded to 50 Ω. The test results show that the GaN HEMT has a output power of over80 W,power gain of more than 16. 2 dB and a maximum power added efficiency of 72. 1% when the test frequency is 1. 20- 1. 32 GHz.

关 键 词：GAN HEMT 内匹配 L波段 功率 高效率 

分 类 号：TN386[电子电信—物理电子学]