铜膜化学机械抛光工艺优化  

Optimization of Chemical Mechanical Polishing Process of Copper Film

作　　者：李炎[1,2] 刘玉岭[1] 李洪波[1,3] 樊世燕[1] 唐继英[1] 闫辰奇[1] 张金[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130 [2]河北科技大学化学与制药工程学院,河北石家庄050018 [3]河北联合大学信息工程学院,河北唐山063000

出　　处：《电镀与精饰》2014年第7期37-41,共5页Plating & Finishing

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308);河北省自然科学基金(E2013202247);河北省自然科学基金(F2012202094);河北省教育厅基金(2011128)

摘　　要：对d为300mm blanket铜膜进行了低压低浓度化学机械抛光实验,分析了抛光工艺参数和抛光液组分对铜膜去除速率及其非均匀性的影响。通过实验表明,当抛光压力为13.780kPa,抛光液流量为175mL/min,抛光机转速为65r/min,0.5%磨料,0.5%氧化剂,7%鳌合剂,铜膜去除速率为1 120 nm/min,片内速率非均匀性为0.059,抛光后铜膜表面粗糙度大幅度下降,表面状态得到显著改善。Chemical mechanical polishing experiments with low pressure and low abrasive concentration are conducted on d300mm blanket copper film, effects of polishing process parameters and alkaline slurry components on removal rate and non uniformity of the copper film are analyzed. Experimental results show that：the removal rate of copper film can reach to 1120 nm/min, corresponding within wafer non uniformity of rate is 0.059, surface roughness of the copper film decrease substantially after polishing and the surface state has been improved significantly when the pressure is 13 780 Pa, slurry flow rate is 175 ml/min, rotating speed is 65 r/min, oxidant concentration is 0. 5 %, abrasive concentration is 0.5 %, and chelating agent concentration is 7 %

关 键 词：化学机械抛光 碱性抛光液 磨料 片内速率非均匀性 表面粗糙度 铜膜 

分 类 号：TG175.3[金属学及工艺—金属表面处理]