离子束溅射制备氧化物薄膜沉积速率调整方法  

Adjusting methods of deposition rates of oxide films prepared by IBS technology

作　　者：刘华松[1,2] 傅翾 季一勤[1,2] 张锋[1] 陈德应[2] 姜玉刚[1] 刘丹丹[1] 王利栓 冷健[1] 庄克文[1] 

机构地区：[1]天津津航技术物理研究所天津市薄膜光学重点实验室,天津300192 [2]哈尔滨工业大学光电子技术研究所,黑龙江哈尔滨150080 [3]二炮驻天津地区军事代表室,天津300192

出　　处：《红外与激光工程》2014年第7期2192-2197,共6页Infrared and Laser Engineering

基　　金：国家自然科学重点基金(61235011);国家重大科学仪器与设备专项(2012YQ040164);天津市自然科学基金(14JCQNJC02400;12JCQNIC01200;13JCYBJC17300)

摘　　要：采用正交试验设计方法,系统研究了离子束溅射HfO2、Ta2O5和SiO2薄膜的沉积速率与工艺参数(基板温度、离子束压、离子束流和氧气流量)之间的关联性。采用正交表L9(34)设计了9组实验,采用时间监控的离子束溅射沉积方法,分别制备HfO2、Ta2O5和SiO2薄膜,并对三种薄膜的27个样品采用椭圆偏振法测量并计算物理厚度,继而获得沉积速率。实验结果表明:对Ta2O5和SiO2薄膜沉积速率影响的工艺参数相同,影响权重从大到小依次为离子束流、离子束压、氧气流量和基板温度;对HfO2薄膜沉积速率影响的工艺参数按权重从大到小依次为离子束流、离子束压、基板温度和氧气流量。研究结果为调整HfO2、Ta2O5和SiO2薄膜沉积速率提供了依据。The effects of preparative parameters such as substrate temperature, ion beam voltage, ion beam current and oxygen flow on the deposition rate of films were systematically researched by using the orthogonal experiment design method. The films including HfO2, Ta2O5 and SiO2 films were prepared by time-power monitoring of ion beam sputtering technology. The 9 groups experiments were arranged by L9 （34）. The physical thicknesses of all the 27 samples were measured by elliptical polarization instrument, and then the deposition rates were obtained. The experimental results show that the deposition rate of Ta2O5 and SiO2 films are affected by preparative parameters with the same influence weight, from high to low the order is ion beam current, ion beam voltage, oxygen flow and substrate temperature. But to the HfO2 films,the order is ion beam current, ion beam voltage, substrate temperature and oxygen flow. The results provide references for adjusting the deposition rate of HfO2, Ta2O5 and SiO2 films.

关 键 词：离子束溅射 HFO2薄膜 Ta2O5薄膜 SIO2薄膜 沉积速率 

分 类 号：O484[理学—固体物理]