多孔硅中金属钯的电沉积与表征  

Electrodeposition of metallic palladium on porous silicon and its characterization

作　　者：邓建[1] 胡睿[1] 张会[1] 张照云[2] 杨玉青[1] 

机构地区：[1]中国工程物理研究院核物理与化学研究所,四川绵阳621900 [2]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《电镀与涂饰》2014年第16期698-700,共3页Electroplating & Finishing

摘　　要：采用电沉积法对自制大深径比盲孔（直径7．7～7．8μm，深度78μm）多孔硅进行金属钯填充。镀液组成和工艺条件为：PdCl2 8．8g／L，KCl 15．0g／L，NH3·H2O 50mL／L，乙醇和水各50％（体积分数），pH8～9，电压15V，电流1．5mA，惰性气体搅拌，时间17h。采用扫描电镜和能谱仪分析了钯在多孔硅中的填充情况。结果表明，金属钯在多孔硅盲孔中实现了满载填充，并在孔的外表面也有沉积。本工艺镀液组成简单，为制备三维硅基氚电池提供了技术基础。The blind holes of porous silicon with large depth-to-diameter ratio （diameter 7.7-7.8 μm, depth 78 μm） were filled with metal palladium by electrodeposition from an aqueous 50vol% ethanol bath containing PdCl2 8.8 g/L, KCl 15.0 g/L, and NH3·H2O 50 mL/L at pH 8-9, voltage 8 V, and current 1.5 mA under the agitation with inert gas for 17 h. The filling state of palladium in porous silicon was analyzed by scanning electron microscope and energy-dispersive spectroscope. The results showed that the blind pores of porous silicon were fully filled with metallic palladium, and there is a palladium coating on its outside surface. The process features simple bath composition and can be used for preparing three-dimensional silicon-based tritium battery.

关 键 词：多孔硅 盲孔 钯 电镀 

分 类 号：TQ153.12[化学工程—电化学工业]