基于循环退火技术的InGaAs/AlGaAs量子阱混杂  

Enhanced AlGaAs/InGaAs quantum well intermixing by the technology of cycles annealing

作　　者：林盛杰[1] 李建军[1] 何林杰[1] 邓军[1] 韩军[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100124

出　　处：《光电子．激光》2014年第8期1471-1475,共5页Journal of Optoelectronics·Laser

基　　金：北京工业大学先进技术基金(002000514312003);北京市教委创新能力提升计划(PXM20134_014204_000029)资助项目

摘　　要：为了解决由于激光器腔面处的光吸收引起的腔面光学灾变损伤(COD),采用无杂质空位扩散(IFVD)法,研究了由SiO2电介质层诱导的InGaAs/AlGaAs量子阱结构的带隙蓝移。使用等离子化学气相沉积(PECVD)在InGaAs/AlGaAs量子阱的表面生长SiO2电介质层;然后采用IFVD在N2环境下进行高温退火实验,从而实现量子阱混杂(QWI)。实验结果表明:蓝移量的大小随退火时间和电介质层厚度的变化而变化,样品覆盖的电介质层越厚,在相同的退火温度下承受的退火时间越长,得到的蓝移量也越大。然而,在高温退火中的时间相对较长时,退火对量子阱造成的损坏相当大。高温短时循环退火,能够在保护量子阱晶体质量的同时实现QWI。通过在850℃退火6min下循环退火5次,得到了46nm的PL蓝移,且PL峰值保持在原样品的80%以上。In order to solve the facet catastrophic optical damage （COD） which is caused by the facet heating due to optical absorption in the mirror region, the effect of intermixing on InGaAs/A1GaAs quantum well structure using impurity-free vacancy disordering （IFVD） technique is investigated. The SiO2 dielectric films are grown on the structure of A1GaAs/InGaAs -MQW/GaAs-buffer layer/InGaAs by plasma enhanced chemical vapor deposition （PECVD）. Then, quantum well intermixing （QWI） is re- alized by the impurity-free vacancy diffusion （IFVD） technology after rapid thermal annealing （RTA） at N2 atmosphere. Through the experiment we find that the magnitude of the blue shift changes with the annealing time and the thickness of the dielectric layer. The thicker dielectric layer under the same an- nealing temperature and the longer annealing time, the larger blue shift we get. However, when the an- nealing time is relatively long in high annealing temperature, the greater damage is made to quantum well from annealing. Cycle-annealing in high temperature for short time is selected to ensure that quantum wells can intermix evidently under the condition of no obvious damage. 46 nm blue shift is achieved by applying a cycle-annealing at 850 ℃ in 6 rain for 5 cycles and the PL peak keeps more than 80% of that of the as-grown sample.

关 键 词：半导体激光器 无杂质空位扩散(IFVD) INGAAS ALGAAS 量子阱混杂(QWI) 腔面光学灾变损伤(COD) 无吸收窗口(NAW) 

分 类 号：TN253[电子电信—物理电子学]