硅微波功率管键合失效机理分析  

The Bonding Failure Mechanism Analysis of Silicon Microwave Power Transistor

作　　者：钱伟[1] 严德圣[1] 丁晓明[1] 周德红[1] 刘雪[1] 高群[1] 蒋幼泉[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2014年第4期377-380,共4页Research & Progress of SSE

摘　　要：硅微波功率管在生产过程中随机发生大量的键合失效。分析表明,这种硅功率管管芯的焊盘与有源区的连接处介质层容易在键合过程中因为受到金丝的振动冲击而毁坏,因此键合完成后镀金层与介质层无法完整粘合,从而造成微调金丝弧度时发生键合失效。通过加厚焊盘镀金层,避免了金丝对介质层的冲击,提高了硅功率管的键合质量及成品率。The bonding failures are found to occur randomly in the production of silicon microwave power transistor. The analysis shows that in the process of bonding, the dielectric layer which is located between the chip bonding pad and the active region is easily destroyed by the vibration of the gold wire＇s impact. So after the completion of the bonding, the gold plated layer and the dielectric layer can not be bonded completely, resulting in bonding failure as micro adjus- ting gold wire arc. By means of thickening the bonding pad＇s gold plated layer, the impact of gold wire on dielectric layer is completely avoided, thus improving the bonding quality and the yield of silicon microwave power transistor.

关 键 词：硅微波功率管 键合 失效分析 

分 类 号：TN305.94[电子电信—物理电子学]