600V高性能新型槽栅内透明IGBT的仿真  

Simulation of 600 V High Performance Novel Trench-Gate ITC-IGBT

作　　者：苏洪源[1] 胡冬青[1] 刘钺杨 贾云鹏[1] 李蕊[1] 匡勇[1] 屈静[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]国网智能电网研究院电工新材料及微电子研究所,北京100192

出　　处：《半导体技术》2014年第12期908-916,共9页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61176071);教育部博士点学科专项科研基金资助项目(20111103120016);国家电网公司科技项目(SGRI-WD-71-13-006)

摘　　要：载流子存储层(CSL)可以改善IGBT导通态载流子分布,降低通态电压,但影响器件阻断能力。为了平衡载流子存储层对器件阻断能力的影响,在器件n-漂移区中CSL层处近哑元胞侧设计了p型埋层(p BL),利用电荷平衡的理念改善电场分布,并借助ISE-TACD仿真工具,依托内透明集电极(ITC)技术,研究了600 V槽栅CSL-p BL-ITC-IGBT电特性。为了保证器件承受住不小于10μs的短路时间,设置了哑元胞。在此基础上,仿真分析了CSL和p BL的尺寸及掺杂浓度、哑元胞尺寸等对器件特性的影响,并与普通的槽栅ITC-IGBT、点注入局部窄台面(PNM)ITC-IGBT的主要技术指标进行对比,给出CSL和p BL的尺寸及掺杂浓度的最佳范围。结果表明,合理的参数设计可使CSL-p BL-ITC-IGBT具有更优的技术折中曲线。Carrier stored layer can improve the IGBT＇ s carrier distribution and reduce state voltage on turn-on state, but carrier stored layer effect on the device blocking ability. In order to alleviate the impact of the carrier storage layer on the device blocking capability, p type buried layer was designed un- der the carrier stored layer along the dummy cell＇ s side in the n- drifting region. Using the concept of charge balance improves electric field distribution, and relying on the ITC technology the electrical characteristics of 600 V trench gate with carrier stored layer and p type buried layer （ITC-IGBT） were re- searched by simulation tools ISE-TCAD. In order to guarantee that the short circuit endurance of the de- vice is not less than 10 ixs, the dummy cell was designed. On this basis, the influences of the sizes and doping concentrations of the pBL and carrier stored layer and the size of dummy cell on the device charac- teristics were analyzed . At the same time, the key technical indexes of trench （ITC-IGBT） and a point injection partially narrow mesa （PNM） trench structure were compared. The sizes and doping concentra- tions of the p type buried layer and carrier stored layer were located in an optimum range. The result shows that the novel structure has a better technical trade-off curve with the designed reasonable parame- ters.

关 键 词：p型埋层载流子存储层内透明集电极绝缘栅双极晶体管(CSL-pBL-ITC-IGBT) 哑元胞 载流子存储层 p型埋层 槽栅 

分 类 号：TN322.8[电子电信—物理电子学]