Mg_xZn_(1-x)O压电薄膜表面粗糙度对SMR性能的影响  

Influence of the Surface Roughness of Mg_xZn_(1-x) O Piezoelectric Thin Films on Characteristics of the SMR

作　　者：沈勇[1] 刘一剑[1] 杨翰林[1] 段力[1] 张亚非[1] 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《微纳电子技术》2014年第12期776-779,784,共5页Micronanoelectronic Technology

基　　金：国家科技项目(2011AA050504)

摘　　要：固体装配型谐振器(SMR)由布拉格反射层上的两个电极及它们之间的压电层制备而成。布拉格层是厚度为1/4波长的高低声阻层结构。ZnO压电薄膜是用来制备SMR的传统压电材料,但却拥有低的纵向声学速度和相对固定的频率响应。由ZnO和MgO合成的三元化合物MgxZn1-xO薄膜是一种高声速、高电阻的压电材料,有很大的潜能用于SMR。MgxZn1-xO薄膜表面的粗糙度对SMR的谐振特性有很大影响。通过射频磁控溅射的方法制备了MgxZn1-xO薄膜,研究了不同射频磁控溅射条件对MgxZn1-xO薄膜表面粗糙度的影响。通过控制淀积条件,获得了c轴择优取向的表面光滑的MgxZn1-xO压电薄膜。通过优化MgxZn1-xO薄膜表面粗糙度,SMR的性能能够得到显著提高。The solidly mounted resonator （SMR） was fabricated from two electrodes upon Bragg reflecting layer and the piezoelectric layer between two electrodes. Bragg reflecting layer was a structure consisting of high and low acoustic impedance layers of quarter-wavelength thickness. ZnO piezoelectric thin film is one of the traditional materials to make the SMR, but has low longi- tudinal acoustic speed and relatively fixed frequency response. Ternary compound MgxZn1-xO thin film formed by alloying ZnO and MgO is a piezoelectric material with high velocity and high resistance, and has strong potential applications in the SMR. The surface roughness of MgxZn1-xO thin film has an important influence on the resonance characteristics of the SMR. MgxZn1-xO thin film was prepared by RF magnetron sputtering, and the effects of different RF magnetron sputte- ring conditions on the surface roughness of MgxZn1-xO thin film were investigated. By control- ling the sputtering conditions, the MgxZn1-xO piezoelectric thin film with c-axis preferential growth direction and smooth surface was obtained. The characteristics of the SMR can be im- proved significantly by optimizing the surface roughness of theMgxZn1-xOthin film.

关 键 词：磁控溅射 压电材料 表面粗糙度 固体装配型谐振器(SMR)MgxZn1-xO 

分 类 号：TN304.21[电子电信—物理电子学]