铁电存储单元单粒子效应的仿真与研究  

Simulation and Study on SEE of the Ferroelectric Memory Cell

作　　者：万义才 翟亚红[1] 李平[1] 辜柯 何伟[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2014年第6期955-957,共3页Piezoelectrics & Acoustooptics

摘　　要：运用电路仿真研究了单粒子瞬态脉冲效应对铁电存储单元存储特性的影响。结合单粒子对MOS器件的影响,用电流模拟单粒子对存储单元的影响且进行仿真分析。仿真结果表明脉冲电流峰值越高,时间越长,铁电存储单元越容易翻转。经分析得出了铁电电容翻转是由瞬态电流脉冲产生的单位面积电荷量决定,最后解释了翻转的原因。This article have studied the effects of the single event transient on the ferroelectric memory cell with circuit simulation. Combined with the effects of the single event effect（SEE） on MOS devices,the effect of single event on the memory cell has been simulated by using the current to simulate the single event. The simulation results show that the higher and longer the peak pulse current,the ferroeleetrie memory cell flips more easily. After analysis, the flip of ferroelectric memory cell is decided by the charge accumulation per unit area on the ferroelectric capacitor. At last , the cause of the fillip has been analyzed.

关 键 词：铁电电容 铁电存储器 单粒子效应 电畴 仿真模型 

分 类 号：TN432[电子电信—微电子学与固体电子学]