1700V碳化硅MOSFET设计  

Design of 1700VSiC MOSFET

作　　者：黄润华[1] 陶永洪[1] 柏松[1] 陈刚[1] 汪玲[1] 刘奥[1] 卫能 李赟[1] 赵志飞[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2014年第6期510-513,共4页Research & Progress of SSE

基　　金：国家高新技术研究发展计划(863计划)资助项目(2014AA052401)

摘　　要：设计了一种击穿电压大于1 700V的SiC MOSFET器件。采用有限元仿真的方法对器件的外延掺杂浓度及厚度、有源区结构以及终端保护效率进行了优化。器件采用14μm厚、掺杂浓度为5×1015cm-3的N型低掺杂区。终端保护结构采用保护环结构。栅压20V、漏压2V时,导通电流大于1A,击穿电压高于1 800V。A 4H-SiC MOSFET with breakdown voltage higher than 1 700 V has been suc cessfully designed and fabricated. Numerical simulations have been performed to optimize the do- ping level and thickness of the drift layer,the structure of active area and the effectiveness of the edge termination technique. The N-type epilayer is 14 μm thick with a doping level of 5×10^15 cm^-3. The devices were fabricated with a floating guard rings edge termination. The drain cur- rent is more than 1 A at Vk = 20 V and Vd = 2 V, and the breakdown voltage is higher than 1 800 V.

关 键 词：4H型碳化硅 金属氧化物半导体场效应晶体管 终端保护 界面态 

分 类 号：TN386[电子电信—物理电子学]