缓变场终止型IGBT特性的仿真  

Simulation Characteristics of Graded Field Stop IGBT

作　　者：匡勇[1] 贾云鹏[1] 金锐 吴郁[1] 屈静[1] 苏洪源[1] 李蕊[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]国网智能电网研究院电工新材料及微电子研究所,北京100192

出　　处：《半导体技术》2015年第1期29-33,43,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61176071);教育部博士点学科专项科研基金资助项目(20111103120016);国家电网公司科技项目(SGRI-WD-71-13-006)

摘　　要：为改善场终止型绝缘栅双极型晶体管（FS-IGBT）电场终止能力的可靠性,对一种缓变场终止型绝缘栅双极型晶体管（GFS-IGBT）的特性进行了仿真研究。与传统FS-IGBT的突变场终止层不同,GFS-IGBT所具有的场终止层是一个厚度为20-30μm,峰值掺杂浓度为3.5×10^15cm^-3的缓变场终止层。采用Sentaurus TCAD仿真软件,对600 V/20 A的FS-IGBT与GFS-IGBT和非穿通型IGBT（NPT-IGBT）在导通、开关和短路特性等方面进行了对比仿真。结果表明,在给定的参数范围内,GFS-IGBT具有更低的通态压降、良好的关断电压波形以及更小的关断能耗。最后介绍了一种针对600 V IGBT器件的缓变场终止结构的制造技术。In order to improve the electric reliability of field-stop insulated gate bipolar transistors （FS-IGBT） , the characteristics of a graded field stop IGBT （GFS-IGBT） structure were simulated and analyzed. Different from the conventional FS-IGBT which has an abrupt FS layer, the proposed GFS-IG- BT has a graded field stop layer, with a width of 20-30μm and a peak doping concentration of 3.5× 10^15 cm^-3. Using Sentaurus TCAD simulation software, the on-state, switching and short-circuit characteristics of the FS-IGBT, GFS-IGBT and NPT-IGBT with ratings of 600 V/20 A were simulated. The re sults show that within the range of parameters given, the GFS-IGBT has a lower on-state voltage, a good turn-off voltage waveform and a smaller turn-off energy loss. Finally, a method to fabricate the GFS layer for a 600 V GFS-IGBT device was introduced.

关 键 词：缓变掺杂 绝缘栅双极型晶体管(IGBT) 通态压降 关断损耗 场终止结构 

分 类 号：TN322.8[电子电信—物理电子学]