射频功率对Si薄膜微观结构及电学性能的影响  

Influence of RF Power on Microstructure and Electrical Properties of Si Thin Films

作　　者：郝娟[1] 蒋百灵[1] 杨超[1] 董丹[1] 张彤晖[1] 

机构地区：[1]西安理工大学材料科学与工程学院,西安710048

出　　处：《人工晶体学报》2014年第11期2835-2839,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51271144)

摘　　要：采用等离子体增强化学气相沉积(PECVD)法制备了不同射频功率的Si薄膜,并对其进行真空退火处理。研究了射频功率和退火处理对薄膜微观结构和电学性能的影响,并总结了不同电场环境对薄膜原子排列有序度的影响规律。结果表明:随射频功率的增加,Si薄膜的非晶结构无实质改变,但其少子寿命明显增强;经800℃真空退火处理后,Si薄膜的微观结构均由非晶态转变为晶态,晶化程度达60%以上,且少子寿命达到20μs以上。A series of Si thin films were deposited by the plasma-enhanced chemical vapor deposition（ PECVD） under different RF powers,and then annealed in vacuum. The influence of RF power and annealing treatment on the microstructure and electrical properties of the film was investigated. The effect of different electric field environments on the order degree of the partial arrangement of Si atoms was summarized in this work. The results show that as the RF power increased,the amorphous structure of Si films had no essential difference while the lifetime of the minority carrier increased apparently. After annealing at 800 ℃,the microstructure of Si films transformed from amorphous to crystalline,and the degree of crystallization was more than 60%. The lifetime of the minority carrier reached over 20 μs.

关 键 词：SI薄膜 射频功率 微观结构 少子寿命 

分 类 号：TB321[一般工业技术—材料科学与工程]