4H-SiC材料在SF_6/O_2/HBr中的ICP-RIE干法刻蚀  

ICP-RIE Dry Etching of 4H-SiC Materials in SF_6/O_2/HBr

作　　者：王进泽[1] 杨香[1] 钮应喜 杨霏 何志[1] 刘胜北[1] 颜伟[1] 刘敏[1] 王晓东[1] 杨富华[1] 

机构地区：[1]中国科学院半导体研究所半导体集成技术工程研究中心,北京100083 [2]国网智能电网研究院电工新材料及微电子研究所碳化硅器件技术研究室,北京102211

出　　处：《微纳电子技术》2015年第1期59-63,共5页Micronanoelectronic Technology

基　　金：国家电网科技项目(SGRI-WD-71-14-004)

摘　　要：传统SiC干法刻蚀中普遍出现明显的微沟槽效应,对后续工艺以及SiC器件性能有重要影响。针对这一问题,采用SF6/O2/HBr作为刻蚀气体,对4H-SiC材料的电感耦合等离子体-反应离子刻蚀(ICP-RIE)进行了工艺条件的研究探索,分别研究了SF6,O2和HBr流量百分比对SiC刻蚀速率及微沟槽效应的影响。实验结果表明:SiC刻蚀速率随SF6和O2流量百分比的增加,先增大后减小。HBr气体作为SiC刻蚀的新型附加气体,在保护侧壁和降低微沟槽效应方面具有重要作用。在SF6,O2和HBr气体流量比为11∶2∶13时取得了较好的刻蚀结果,微沟槽效应明显降低,同时获得了较高的刻蚀速率,刻蚀速率达到536 nm/min。Obvious microtrenching effect in the traditional SiC dry etching has an important influence on the subsequent processes and SiC device performances.In order to solve this problem,using the SF6/O2/HBr as etching gas,the inductively coupled plasma-reactive ion etching（ICP-RIE）processing conditions of the 4H-SiC material was investigated.The effects of SF6,O2 and HBr flow percentages on the SiC etching rate and microtrenching effect were investigated.The experimental results show that with the increase of SF6 and O2flow percentages,SiC etching rate increases firstly and then decreases.As the new additional gas of SiC etching,HBr plays an important role in protecting the side walls and reducing the microtrenching effect.When the gas flow ratio of SF6,O2 and HBr is 11∶2∶13,the better etching result is obtained.The microtrenching effect is decreased obviously,while the relative high etching rate of 536 nm/min is achieved.

关 键 词：碳化硅(SiC) 电感耦合等离子体-反应离子刻蚀(ICP-RIE) SF6/O2/HBr 微沟槽效应 刻蚀速率 

分 类 号：TN305.2[电子电信—物理电子学]