原子层沉积技术中电场对ZnO薄膜结晶性能的调制研究  

Dependence of ZnO Films Crystal Properties on Electric Field in Atomic Layer Deposition Process

作　　者：卢维尔[1] 李超波[1] 夏洋[1] 李楠[1] 张艳清[1] 赵丽莉[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《材料导报（纳米与新材料专辑）》2014年第2期255-259,共5页

基　　金：中国科学院微电子器件与集成技术重点实验室;中国科学院仪器研制项目(YZ201256)

摘　　要：采用一种可变电场调制的原子层沉积技术(E-ALD)制备了氧化锌(ZnO)薄膜。在前驱体脉冲时,通过施加不同大小和方向的电压,可以对制备所得ZnO薄膜的晶体择优取向和结晶性能进行可控调制。当在锌源脉冲时施加正电压,氧源脉冲时施加负电压,制备得到了c轴择优取向的ZnO薄膜。电场对薄膜的调制机理为:当在腔室内施加电场时,极性的前驱体分子受到电场偶极矩的作用,使得分子发生偏转并且沿着电场线方向加速地向衬底运动,这对衬底表面化学反应的强度以及发生反应后分子的排列产生影响,进而影响到制备所得薄膜的结构和性能。这种E-ALD技术为半导体薄膜的制备提供了一条新的途径,有望制备出特定性能的薄膜材料。The ZnO films have been prepared by an electric field-assisted atomic layer deposition method （E- ALD）. It is revealed that the directions of electric field during the precursor pulsing were crucial for the ZnO films crystal orientation and structure. The ZnO films with c-axis preferred orientation and the least oxygen vacancy defect were obtained when the holder electric polarities were positive and negative during the DEZn and H20 pulse, respectively. It is supported that when electric field was applied in the chamber, the torque may lead to the precursor molecular alignments along the electric field direction, which could affect the film growth process and then influence on their structures and properties. This variable electric field-assisted ALD approach would provide an efficient protocol for the growth of semiconductor films with designed properties.

关 键 词：ZNO薄膜 原子层沉积 可变电场 择优取向 

分 类 号：TB321[一般工业技术—材料科学与工程] O69[理学—化学]