特高压晶闸管结终端造型技术  

Junction Terminal Structure Technology of Ultra High Voltage Thyristor

作　　者：高山城[1] 李罛 吴飞鸟 吴涛[1] 袁渊[1] 何杉[1] 

机构地区：[1]西安电力电子技术研究所,西安710061

出　　处：《半导体技术》2015年第2期129-135,共7页Semiconductor Technology

基　　金：科技部科研院所技术开发专项资助项目(2009EG119124)

摘　　要：分析了传统晶闸管结终端造型技术的优缺点。基于双负角结终端造型技术,通过径向变掺杂技术和类台面造型技术改进,发展了一种全新的结终端造型技术。该技术不仅使芯片极薄化,而且使结终端造型占用芯片长度极小化,同时使有效导通长度极大化。制造并测试了三种不同结终端造型技术的样品,测试结果表明,采用该技术的样品在不降低阻断电压(≥8 000 V)前提下,具有更小的漏电流(2.50 m A);在流过相同的通态电流(4 500 A)时,具有更小的通态压降1.782 V;而且反向恢复电荷、dv/dt耐量、di/dt耐量、关断时间等得到全面优化。成功研制了6英寸(1英寸=2.54 cm)电流为4 500 A、阻断电压为8 500 V的特高压晶闸管,其动态特性和参数的一致性满足设计及应用要求。The advantages and disadvantages of traditional thyristor＇s junction terminal structure technology were analyzed. Based on double-negative angle junction terminal structure technology,a new junction terminal structure technology was developed by the technical transformation of radial variable doping and similar mesa structure. The technology made the chip thickness to be very thin,and minimized the junction terminal structure length on chip,as well as maximized the effective conduction length of the device.Three different samples of junction terminal structure technology were made and tested. The test results indicate that the samples using the technology has a smaller leakage current of 2. 50 m A without reducing blocking voltage（ ≥8 000 V） and a smaller on-state voltage drop of 1. 782 V under flowing the same on-state current（ 4 500 A）. Moreover reverse recovery charge,dv / dt tolerance,di / dt tolerance,turnoff time are fully optimized. A 6 inches（ 1 inch = 2. 54 cm） ultra-high voltage thyristor was successfully developed which the conducting current and blocking voltage are 4 500 A and 8 500 V respectively,and the dynamic characteristic and parameters consistent fulfill the design and opplication requirement.

关 键 词：结终端 变掺杂 类台面 阻断电压 通态电流 通态压降 

分 类 号：TN34[电子电信—物理电子学]