溅射功率对掺镁氧化锌薄膜结构及厚度的影响  

The Effect of Sputtering Power on the Structure and Thickness of Mg-doping ZnO Thin-Film

作　　者：成桢[1] 

机构地区：[1]西安文理学院应用物理研究所,西安710065

出　　处：《西安文理学院学报（自然科学版）》2015年第1期60-62,83,共4页Journal of Xi’an University(Natural Science Edition)

基　　金：西安市科技计划创新基金项目(CXY1352WL31)

摘　　要：采用射频磁控溅射法在玻璃衬底上制备掺镁氧化锌薄膜,利用SEM(扫描电镜)、XRD(X射线衍射)和椭偏仪等设备研究薄膜的表面形貌、成分、结构和厚度.结果表明,溅射功率没有对薄膜的生长方向产生较大影响,当溅射功率在40 W到100 W之间变化时,随着溅射功率的增大薄膜的结晶状况变好,晶粒尺寸变大,薄膜的厚度增加.Mg-doping ZnO thin-film is prepared on the substrate of glass by RF magnetron sput- tering. The shape, components, structure and thickness of the thin-film is studied by means of SEM,XRD and ellipsometer. The result shows that the sputtering power has little effect on the growth of thin-film. When the sputtering power varies between 40 W and 100 W,the crystalliza- tion of thin-film improves with the increase of sputtering power, the crystal grain largens and the film thickness increases.

关 键 词：掺镁氧化锌薄膜 磁控溅射 溅射功率 薄膜形貌 薄膜厚度 

分 类 号：TN304[电子电信—物理电子学]