VCSEL阵列用半绝缘砷化镓单晶生长工艺研究  

The Technology of 3-inch SI-GaAs Monocrystal Growth for VCSEL Array

作　　者：孙强[1] 兰天平[1] 周春锋[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《天津科技》2015年第3期18-20,共3页Tianjin Science & Technology

摘　　要：VCSEL(垂直腔面发射激光器)阵列是一种面发射的化合物半导体有源器件,已广泛应用于激光制导、激光测距等军事电子领域。为了减少发射单元之间的高频串扰,VCSEL阵列必须生长在高电阻率和低位错密度的砷化镓衬底上。通过采用VGF(垂直梯度冷凝法)生长7.62 cm砷化镓单晶,并选取合适的温度梯度(4℃/cm左右)和低位错籽晶,同时掺入一定剂量的高纯碳粉并选用适量的无水氧化硼作为液封剂,成功地研制出低位错密度的7.62 cm半绝缘砷化镓单晶材料。The VCSEL（Vertical Cavity Surface Emitting Laser）array, a type of active compound semiconductor device with laser beam emission from the surface, has been widely applied in military in laser guidance and laser ranging. In order to reduce the high frequency crosstalk between launch units, the VCSEL array must be grown on a GaAs substrate with high resistivity and low etch pit density. In this study, a 3-inch SI-GaAs monocrystal with low etch pit density was successfully developed from a 3-inch GaAs monocrystal grown by VGF （Vertical Gradient Freeze） with the selection of a suitable temperature gradient （about 4℃/cm）and a low seed crystal, the mixing of a certain dose of high purity carbon powder and the use of anhydrous boron oxide as the liquid seal.

关 键 词：VGF砷化镓 单晶生长 半绝缘 

分 类 号：TN304.0[电子电信—物理电子学]