808nm高功率VCSEL刻蚀工艺研究  

Study on the Etching Process in 808nm High-power VCSEL

作　　者：冯源[1] 晏长岭[1] 郝永芹[1] 王勇[1] 芦鹏[1] 李洋[1] 李再金[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,长春130022

出　　处：《长春理工大学学报（自然科学版）》2014年第6期8-11,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

摘　　要：为提高808nm高功率VCSEL的光电性能,对不同实验条件下的氧化限制型VCSEL湿法刻蚀工艺进行了实验研究,制备出多环形电极结构VCSEL器件。实验中采用H3PO4系腐蚀液替代以往常用的H2SO4系腐蚀液,通过改变湿法刻蚀工艺的温度条件及腐蚀液的浓度配比,能够较精确的控制腐蚀深度,消除"燕尾"结构,最终确定808nm高功率VCSEL湿法腐蚀工艺的最佳温度条件及腐蚀液的最佳浓度配比。测试结果表明,采用这种湿法刻蚀工艺条件制备的808nm高功率VCSEL器件,室温下的阈值电流为430m A,微分量子效率为0.44W/A,最大输出功率达到0.42W,其光电性能远优于传统湿法刻蚀工艺制备的同种高功率VCSEL器件。In order to improve opto-electric characteristics of 808 nm high-power VCSEL,the processing of the wet etching have been studied with experiments of oxidation confinement high-power VCSEL in different conditions and multi-ring electrodes VCSEL.In the experiments,the H3PO4 liquid is used as etching liquid instead of H2SO4 liquid.By changing the etching liquid content and the etching condition temperature,the etching depth can be controlled and the＂dovetail＂ structure can be eliminated.The best temperature condition and etching liquid concentration of 808 nm high-power VCSEL wet etching process have been determined.The testing results show that the threshold current is430 m A at room temperature,the differential efficiency is 0.44W/A and the maximal CW output power is 0.42 W.Its opto-electric characteristics is much better than the same high-power VCSELs of using the conventional wet etching process.

关 键 词：垂直腔面发射半导体激光器 高功率 湿法刻蚀 燕尾结构 刻蚀速率 

分 类 号：TN248.4[电子电信—物理电子学]