一种离线光学邻近效应匹配方法的研究和仿真  

Research and Simulation of an Off-Line Optical Proximity Matching Method

作　　者：宋之洋 郭沫然[1] 苏晓菁 刘艳松[1] 粟雅娟[1] 韦亚一[1] 

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029

出　　处：《微纳电子技术》2015年第3期197-203,共7页Micronanoelectronic Technology

基　　金：国家科技重大专项资助项目(2013ZX02303)

摘　　要：目前小技术节点的光学邻近效应校正(OPC)过分依赖光刻机与光刻工艺的属性,量产时难以在不同型号光刻机间转移,而国内芯片制造厂光刻机种类繁杂,不可避免地需要解决工艺转移的问题。针对上述问题,以不同光刻机间的光学邻近效应匹配为研究对象,阐述了匹配的原理及流程,提出了一种利用常用的OPC建模工具实现离线匹配的方法,模拟分析了该方法对成像误差的补偿效果,揭示了不同性质的误差对成像性能的影响规律,验证了该方法的正确性,为不同光刻机间的工艺转移提供了新的思路。The optical proximity correction （OPC） with small technology nodes excessively relies on the properties of the lithography machine and lithography process. The OPC rules are difficult to be transferred between different types of lithography machines in high volume manufacture. Various types of the lithography machines in native fabs inevitably need to solve the problem of the process transfer. To solve the up-mentioned problems, with the optical proximity matching between different lithography machines as the research obiect, the principle and flow of the mat- ching were expounded. An off-line matching method based on the common OPC modeling tool was proposed. The replacement effect of the method on the imaging error was simulated and ana- lyzed. The effect laws of the errors with different properties on the imaging performances were revealed. The correctness of the method was verified to provide the new idea for the process transfer between different lithography machines.

关 键 词：光刻 计算光刻 光学邻近效应校正(OPC) 光学邻近效应匹配 工艺窗口控制 

分 类 号：TN305.7[电子电信—物理电子学]