硅基SiC薄膜的制备及性能研究  

Preparation and properties of SiC thin film on silicon substrate

作　　者：胡冰冰[1] 何晓雄[1] 许世峰[1] 孙飞翔[1] 

机构地区：[1]合肥工业大学电子科学与应用物理学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2015年第3期351-353,392,共4页Journal of Hefei University of Technology：Natural Science

基　　金：安徽省自然科学基金资助项目(11040606M63)

摘　　要：文章采用电子束物理气相沉积法在单晶Si(100)基片上制备了单层SiC薄膜和Al2O3/SiC双层膜,然后在不同温度下经氩气保护退火。通过X射线衍射仪(XRD)、原子力显微镜(AFM)对所制备的薄膜进行了结构和表面形貌分析。研究表明:退火后SiC薄膜由非晶态转为晶态,随退火温度的升高,薄膜结晶更充分,薄膜表面平均粗糙度变小;双层膜与单层膜相比,其SiC衍射峰有所增强,薄膜表面更加平滑。SiC film and A12Ch/SiC bilayer were deposited by the electron beam-physical vapor deposition（EB- PVD） method on single-crystal Si（100） substrate and then annealed under argon atmosphere at different tem- peratures. By X-ray diffraction（XRD） and atomic force microscopy（AFM）, the structure and surface mor- phologies of the thin film were analyzed The results show the amorphous SiC film is changed into crystalline one after annealing. The crystallinity of the SiC thin film increases with the increase of annealing temperature, and the average surface roughness of the film becomes small. The diffraction peak of the bilayer SiC film is stronger than that of single film and the surface of the bilayer SiC film becomes smoother.

关 键 词：SIC薄膜 电子束物理气相沉积 表面形貌 X射线衍射 

分 类 号：TN305.8[电子电信—物理电子学]