溅射功率对磁控溅射ZnO∶Al(ZAO)薄膜性能的影响  

Effects of sputtering power on Al doped ZnO thin films deposited by RF magnetron sputtering

作　　者：高立华[1] 郑玉婴[1] 

机构地区：[1]福州大学材料科学与工程学院,福州350108

出　　处：《功能材料》2015年第8期8028-8030,共3页Journal of Functional Materials

基　　金：福建省自然科学基金资助项目(2012J01016)

摘　　要：采用射频磁控溅射工艺,以高密度氧化锌铝陶瓷靶为靶材,衬底温度控制在室温,在玻璃基底上制备了透明导电ZnO∶Al（ZAO）薄膜.利用X 射线衍射仪（XRD）、原子力显微镜（AFM）、紫外G可见光谱仪和范德堡法,系统研究了不同溅射功率对薄膜的结构、形貌及光电特性的影响.结果表明,不同溅射功率对薄膜的光透射率影响不大,而对薄膜结晶和电学性能影响较大.XRD表明薄膜为良好的c 轴择优取向;可见光区（400-600nm）平均透过率达到85%以上;在120W 下沉积的薄膜电学性能达到了最佳.ZnO∶ Al( ZAO) transparent conductive thin films were sputtered on glass substrates by RF magnetron sputtering with Zn O ceramic target mixed with Al2O3 of 2wt%. The influence of sputtering power on the structural,optical and electrical performance of ZAO films were characterized by X-ray diffraction( XRD),atomic force microscope( AFM),UV-Vis spectrograph and Van der Pauw method. The results indicate that the different sputtering power has little influence on the light transmittance,but there are greater effects on film crystallization and electrical properties. c-axis orientation of ZAO films in( 002) direction was distinctly observed by XRD. The average visible( about 400-600 nm) transmittance was more than 85%. The optimum electrical property of ZAO film was prepared at sputtering power of 120 W.

关 键 词：ZAO薄膜 溅射功率 方块电阻 透过率 

分 类 号：O484[理学—固体物理]