不同生长方向的GaN纳米线的可控制备与性能表征  

Controlled Fabrication and Performance Characterization of Oriented GaN Nanowires

作　　者：吴东旭[1] 郑学军[2] 程宏斌[2] 李佳[1] 罗晓菊[2] 

机构地区：[1]上海理工大学机械工程学院,上海200093 [2]上海理工大学材料科学与工程学院,上海200093

出　　处：《人工晶体学报》2015年第2期389-393,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51272158);长江学者和创新团队发展计划(IRT-14R48)

摘　　要：采用化学气相沉积法,通过改变催化剂和衬底,以Ga2O3和Ga N的混合粉末为镓源制备出了不同生长方向的Ga N纳米线,制备的平躺于衬底的Ga N纳米线的直径约为60 nm,长度为10μm到30μm之间。垂直于衬底的Ga N纳米线阵列的直径约为300 nm,长度约为5μm。使用扫描电子显微镜(SEM)、X射线衍射(XRD)、光致发光谱(PL)和透射电子显微镜(TEM)对样品进行了分析表征,结果表明所得样品为六方纤锌矿结构的Ga N单晶纳米线。通过改变催化剂和衬底等生长条件,研究了衬底和催化剂对纳米线生长方向的影响,为以后的大量制备以及纳米器件的制作提供了依据。High-quality GaN nanowires with different growth orientations were synthesized by chemical vapour deposition（CVD） method under two different conditions, i. e. catalyst and substrate. The nano- structures were characterized by Scanning electron miroscopy （SEM）, X-ray miroscopy （SEM）, X-ray diffraction （XRD）, photoluminescence （PL） specturm, transmission electron microscopy （TEM）, high- resolution transmission electron microscopy （HRTEM）. The grown GaN nanowires lie on the substrate can be observed clearly with diameters around 60 nm and length up to 10-30 μm. The diameter of the GaN nanowire arrays perpendicular to the substrate is about 300 nm and the length is up to 5 μm. The results show that the grown GaN nanowires are single-crystal with hexagonal wurtzite structure. The growth orientation of GaN nanowires are related to both the catalyst and the substrate. Those results will be useful for the large-scale preparation and applications of the nanowires in the nanodevices.

关 键 词：GAN纳米线 化学气相沉积 催化剂 衬底 

分 类 号：O614.37[理学—无机化学]