氮化物半导体电子器件新进展  

Progress in nitride semiconductor electronic devices

作　　者：郝跃[1] 张金风[1] 张进成[1] 马晓华[1] 郑雪峰[1] 

机构地区：[1]西安电子科技大学微电子学院,宽带隙半导体技术国家重点学科实验室,西安710071

出　　处：《科学通报》2015年第10期874-881,共8页Chinese Science Bulletin

摘　　要：氮化物宽禁带半导体是实现大功率、高频率、高电压、高温和耐辐射电子器件的一类理想材料.基于氮化镓(GaN)异质结的高电子迁移率晶体管(HEMT)是氮化物电子器件的主流结构,该结构利用高电导率二维电子气实现强大的电流驱动,同时保持了氮化物材料的高耐压能力.近年来,GaN HEMT器件主要在微波功率和电力电子2个领域得到了快速发展.本文评述了GaN微波毫米波功率器件和高效电力电子器件的若干研究进展,并提出了氮化物电子器件仍存在的问题及解决方向.A nitride wide-bandgap semiconductor is an excellent choice to realize large-power, high-frequency, high-voltage, high-temperature, and radiation-resistive electronic devices. The mainstream structure of a nitride electronic device is a high electron mobility transistor （HEMT） based on a gallium nitride （GaN） heterostructure. The HEMT devices utilize a two-dimensional electron gas （2DEG） with a high electrical conductivity to realize a powerful current-driving capability and simultaneously maintain the high breakdown field of nitride materials. In recent years, GaN HEMTs have been developed very rapidly for promising applications in microwave power amplification and power electronics. Nitride growth on silicon carbide （SIC） substrates, device surface passivation （generally using a silicon nitride dielectric）, and the utilization of a field plate （FP） structure have increased the power density of GaN HEMTs to greater than 40 W/mm at 4 GHz. Further, recessed insulating gate HEMT technology has helped to realize a power added efficiency （PAE） of 73% at 4 GHz. In addition, aggressive vertical and lateral downscaling has achieved a power density of 1.8 W/mm and PAE = 21% at 94 GHz, a cutoff frequency （fT） of 454 GHz, and a maximum oscillation frequency （fmax） of 582 GHz. For GaN power electronic devices, an off-state breakdown voltage （VBR） of 10.4 kV and a power figure of merit （VBR^2/Ron, where Ron is the specific on-resistance） of 2100 MV^2/（Ω cm^2） have been realized for depletion-mode GaN HEMTs through current leakage control with various technologies such as a highly resistive AI（Ga）N back barrier, an insulating gate, an FP or more, and aluminum nitride （A1N） passivation. Some enhancement- mode GaN HEMT device structures including metal-oxide-semiconductor-（MOS-） channel HEMTs, a gate injection transistor （GIT）, and p-GaN gate HEMTs have also exhibited promising high-voltage switching characteristics. A threshold voltage （Vth） of 2.0 V and VBR=

关 键 词：氮化物半导体材料 微波功率器件 电力电子器件 

分 类 号：TN303[电子电信—物理电子学]