一种适用于微电子器件的密封漏气分析方法  

A Method for Cavity Leakage Analysis on Metal Sealed Electronic Device

作　　者：张健[1] 李茂松[1] 黄大志[1] 

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2015年第2期271-274,共4页Microelectronics

摘　　要：关于微电子器件密封失效的分析方法多种多样,并且各有优缺点。对大漏孔的器件,通过氟油粗检可判断出漏气的具体位置。而对于漏孔较小的微漏器件,确定漏孔位置是非常困难的。根据气体分子机理和氦泄漏原理模型,提出了一种氦泄漏通道局部测试法来确定漏点的位置,从而解决了微漏器件漏点分析难题。通过大量试验数据对比分析,验证了该方法的有效性与准确性。There were many methods for analyzing the microelectronic devices package hermeticity,and each approach had their advantages and disadvantages.Usually the gross bubble test method could determine the leakage location for large leak hole devices,but for low leak hole devices,it was very difficult to determine the leak holes.A helium leak channel local test method was proposed to determine the leak holes of packages based on the gas molecular move mechanism and helium leak principle model.This method had solved the problems of locating the fine leak holes.Many test data having been compared,the validity and accuracy of the proposed method was verified.

关 键 词：微电子封装 失效分析 气密性 金属封装 

分 类 号：TN305.94[电子电信—物理电子学]