RF偏置功率对磁控溅射AlN薄膜性能的影响  

Effect of the RF Bias Power on the Performance of AlN Thin Films Prepared by the Magnetron Sputtering

作　　者：李明月[1] 霍彩红[1] 韩东[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2015年第4期261-265,共5页Micronanoelectronic Technology

摘　　要：采用射频（RF）反应磁控溅射法,以氩气和氮气为反应气体,在不同的RF偏置功率下,在Si（100）和Si（111）衬底上制备了具有六方纤锌矿结构的AlN薄膜。使用扫描电子显微镜（SEM）表征了薄膜的截面形貌和厚度;利用原子力显微镜（AFM）和X射线衍射仪（XRD）研究了RF偏置功率对Si（111）和Si（100）衬底上沉积的AlN薄膜微观结构和表面粗糙度的影响。结果表明,在RF偏置功率为5~15 W时,两种衬底均可生长（002）择优取向AlN薄膜。RF偏置功率为20 W时,AlN薄膜（002）择优取向变弱,薄膜质量变差。当RF偏置功率为10 W时,Si（111）和Si（100）两种衬底沉积的AlN薄膜的半高宽（FWHM）值和表面均方根粗糙度均最小,其表面均方根粗糙度的最小值分别为2.427和2.836 nm。Using the radio frequency（RF）reactive magnetron sputtering method,with Ar and N2 as the reactive gas,the AlN films with the hexagonal wurtzite structure were deposited on Si（100）and Si（111）substrates at different RF bias powers.The cross-sectional morphology and thickness of the thin film were characterized by the scanning electron microscopy（SEM）.By the atomic force microscopy（AFM）and X-ray diffractometer（XRD）,the effects of the RF bias power on the micro-structure and surface roughness of the AlN films deposited on Si（100）and Si（111）substrates were investigated.The results show that the AlN films along preferred orientation（002）were deposited on the two different substrates with the RF bias power of 5-15 W.The AlN films（002）preferred orientation is weaken,and the film quality is worse at the RF bias power of 20 W.When the RF bias power is 10 W,the full width at half maximum（FWHM）and root mean square roughness of the AlN films deposited on the Si（111）and Si（100）substrates are minimum,and the root mean square roughness are 2.427 and 2.836 nm,respectively.

关 键 词：氮化铝薄膜 反应磁控溅射 择优取向 射频(RF)偏置功率 表面形貌 

分 类 号：TN305.92[电子电信—物理电子学]