双极IC接触电阻改善研究  

Study on Ohmic Contact of Biploar IC

作　　者：赵铝虎 阚志国 

机构地区：[1]华越微电子有限公司,绍兴312000

出　　处：《微处理机》2015年第2期4-6,共3页Microprocessors

摘　　要：给出了一种解决双极集成电路在生产中欧姆接触偏大的问题,特别是双极集成电路P型接触偏大的问题解决方法。针对双极集成电路在批量生产过程中P型欧姆接触偏大的现象作了分析,并根据所积累的专业经验,在生产工艺过程中安排了过腐蚀、soft-etch,混酸腐蚀硅等专项实验,找到问题的原因和解决方法。通过长时间以及大批量生产实践的检验,这种方法对改善双极集成电路中P型接触电阻非常有效,因此对提高双极集成电路的工艺控制稳定性具有重要意义。A solution for ohmic contact,especially higher type P contact during bipolar IC manufacturing,is given out in the article. The analysis,aiming at the higher type P ohm contact phenomenon in batching production,is conducted. Based on professional experience,some experiments such as over etching,soft- etching,mixing acid and so on are performed,and the reasons and solutions are found out at last. By long time and batching production proof- test,the result shows that it is effective and important to improve the process controlling stability in bipolar IC processing.

关 键 词：双极集成电路 欧姆接触 硅刻蚀 湿法腐蚀 工艺控制 

分 类 号：TN431[电子电信—微电子学与固体电子学]