铁电薄膜存储器底电极Pt/Ti的制备及性能研究  

Research of Preparation and Properties of Lower-electrode (Pt/Ti) of Ferroelectric Thin Film Memory

作　　者：彭烈涛[1] 林更琪[1] 廖红伟[1] 李震[1] 李佐宜[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《信息记录材料》2002年第3期9-12,共4页Information Recording Materials

摘　　要：应用射频磁控溅射方法 ,在Si基片上采用不同的溅射工艺制备了铁电薄膜底电极Pt/Ti,并分析了在不同温度下退火后材料的电导率性能和粘结力性能 ,从理论和实验上分析了不同的溅射工艺和退火处理对底电极性能的影响。Lower-electrode (Pt/Ti thin film) for ferroelectric memory on silicon substrates was made by using RF-magnetron sputtering under different conditions,and analyze their electric properties and adhesion power properties after annealing in different temperatures.We conclude the influences to these thin films with different sputtering conditions and annealing methods.

关 键 词：铁电薄膜 存储器 底电极 Pt/Ti 制备 性能 研究 电导率 粘结力 退火 

分 类 号：TP333.32[自动化与计算机技术—计算机系统结构]