基于外部激活表面高温状态下的硅-硅键合  

High Temperature Si-Si Direct Bonding Technology with the External-Activated Surface

作　　者：王亚彬[1] 王晓光[1] 郑丽[1] 王成杨[1] 宋尔冬 

机构地区：[1]中国电子科技集团公司第四十九研究所,哈尔滨150001

出　　处：《微纳电子技术》2015年第5期325-328,共4页Micronanoelectronic Technology

摘　　要：提出了一种应用于硅-硅键合过程中表面激活的新方法,采用复合激活的方式,使预键合的硅片表面分别通过化学溶液激活和UV光激活相互结合的手段获得较高的表面态。经键合机预键合后,在高温炉中完成原子轨道重叠,实现硅-硅键合。通过镜下检查和破坏性实验等方式分别对键合的效果和强度进行深入测试,并给出相应的实验效果图和测试结果。实验结果表明,采用新激活方法的键合界面无空洞且均一性良好,键合强度高,证明了新激活方法的可行性和优越性。针对高温键合工艺过程中容易产生空洞这一问题提出了新的解决方案。A new method of the surface activation process for the Si-Si direct bonding was presented. To obtain the higher surface state, the surfaces of the pre-bonding silicon wafers were activated by the composite activation method, i.e. the combination of the chemical solution and UV light. The pre-bonding was performed in a bonding machine, then the atoms on the surface between the two wafers were connected together and the atomic orbitals overlap after the high temperature annealing in the high temperature furnace, thus the Si-Si bonding was completed. Further the tests for the effect and strength of the bonding were done by the microscopic examination and destructive test, respectively. Besides, the correlated experimental effect graphs and measurement results were given. The experiment result shows that the new activation bonding methods can obtain a high qualified bonding interface with good homogeneity and high bonding strength, and no defects or hollows are found on the bonding interface, proving the feasibility and superiority of the new activation method. The new activation method presents a novel solution for defects and hollows which frequently appears in the high temperature bonding process.

关 键 词：表面激活 表面态 高温退火 硅-硅直接键合(SDB) 空洞 键合强度 

分 类 号：TN305.93[电子电信—物理电子学]