P沟道恒流二极管的电流扩展方法  

The Current Expansion Method of P-channel Current Regulative Diode

作　　者：鲁冬梅[1] 刘桥[1] 杨发顺[1] 陈睿[1] 

机构地区：[1]贵州大学贵州省贵阳市微纳电子与软件重点实验室,贵州贵阳550025

出　　处：《贵州大学学报（自然科学版）》2015年第2期47-49,共3页Journal of Guizhou University:Natural Sciences

基　　金：贵州省科学技术基金(黔科合GY[2012]3030号)

摘　　要：介绍了P沟道恒流二极管和NPN双极型晶体管的工艺制作,采用PN结隔离技术实现隔离,巧妙地将集电极、发射极和恒流二极管沟道区同时制作,得到兼容后的结构,并对兼容结构进行了特性仿真。介绍了工艺流程,讨论了沟道长度、沟道厚度、沟道杂质浓度、基区宽度等结构参数对器件特性的影响。并用该兼容工艺将P沟道恒流二极管的恒定电流值放大了73倍。The process of fabricating the P-channel current regulative diode and NPN-bipolar junction transistor was introduced. A PN junction isolation technology was used to achieve the isolation, making the collector, emit- ter and the channel region of current regulative diode at the same time, getting a compatible structure, and the simulation was finished for the characteristics of the structure. The process flow was introduced and the impact of the channel length, channel thickness, channel impurity concentration, base width and other structural parameters on the device characteristics were discussed. Using this compatible process, the current value is magnified 73 times.

关 键 词：P沟道恒流二极管 电流扩展 沟道长度 沟道厚度 沟道杂质浓度 基区宽度 

分 类 号：TN31[电子电信—物理电子学]