Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes  

作　　者：汪莱 杨迪 郝智彪 罗毅 

机构地区：[1]Tsinghua National Laboratory on Information Science and Technology and Department of Electronic Engineering,Tsinghua University

出　　处：《Chinese Physics B》2015年第6期25-30,共6页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2013CB632804,2011CB301900,and 2012CB3155605);the National Natural Science Foundation of China(Grant Nos.61176015,61210014,51002085,61321004,61307024,and 61176059);the High Technology Research and Development Program of China(Grant No.2012AA050601)

摘　　要：InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.

关 键 词：INGAN quantum dot light emitting diode MOVPE 

分 类 号：O471.1[理学—半导体物理] TN312.8[理学—物理]