MEMS器件的W2W真空封装研究  

Study on W2W Vacuum Package for MEMS Device

作　　者：董艳[1] 

机构地区：[1]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123

出　　处：《仪表技术与传感器》2015年第5期17-19,共3页Instrument Technique and Sensor

摘　　要：开发了一种适于MEMS器件的基于W2W(圆片对圆片)工艺的简易的圆片级真空封装方法。通过电镀工艺在MEMS器件圆片和封盖圆片上各沉积含5μm Cu和1.5μm Sn金属层的键合环。器件圆片和封盖圆片在160℃及0.01Pa的真空环境中保持10 min以形成真空,之后在270℃及4 MPa保持30 min通过Cu和Sn的互溶扩散工艺完成键合。测量键合区内Cu元素和Sn元素的重量比,证实形成了Cu3Sn和Cu6Sn5金属间化合物。通过剪切力测试对单个芯片的键合面强度进行标定,计算剪切强度达32.20 MPa。A simple wafer-level vacuum packaging method based on W2W process was developed for MEMS device.The solder frames with Cu and Sn metallization layers were deposited on both MEMS device wafer and cap wafer with electroplating process. MEMS device wafer and cap wafer were kept for 10 min in vacuum of 0.01 Pa and at the temperature of 160℃to create vacuum. Then the wafers were bonded together through the inter diffusion process of elemental Cu and Sn by keeping for 30 min at 270℃and 4 MPa.The intermetallic Cu3Sn and Cu6Sn5 was confirmed by measuring the weight ratio of elemental Cu and Sn in bonding region.The strength of bonding area of single chip was characterized by shear testing,calculating shear strength for bonding area was 32.20 MPa.

关 键 词：圆片对圆片工艺 真空封装 微电子机械系统 Cu-Sn键合 圆片级封装 互溶扩散工艺 

分 类 号：TN405[电子电信—微电子学与固体电子学]