GaN纳米柱发光特性  

Luminescence Property of GaN Nanorod

作　　者：杨华[1,2] 谢自力[1,2] 戴姜平 修向前[1,2] 赵红[1,2] 陈鹏[1,2] 张荣[1,2] 施毅[1,2] 韩平[1,2] 郑有炓[1,2] 

机构地区：[1]南京大学江苏省光电功能材料重点实验室,江苏南京210093 [2]南京大学电子科学与工程学院,江苏南京210093

出　　处：《发光学报》2015年第3期279-282,共4页Chinese Journal of Luminescence

基　　金：国家重点基础研究发展规划(2011CB301900;2012CB619304);国家高技术研究发展规划(2014AA032605);国家自然科学基金(60990311;61274003;61176063);江苏省自然科学基金(BK2011010;BY2013077;BE2011132);教育部新世纪优秀人才支持计划(NCET-11-0229)资助项目

摘　　要：用自组装的Ni纳米岛做掩模通过ICP刻蚀得到Ga N纳米柱,采用扫描电子显微镜(SEM)观测其形貌,室温下光致发光(PL)谱测量研究样品发光特性。结果表明,室温下Ga N纳米柱的发光强度是体材料的2.6倍。为了修复刻蚀损伤,用KOH对样品进行湿法处理,发现经KOH处理的纳米柱与处理前相比变得更直,且其发光较处理之前进一步增强。为了研究其原因,分别对KOH处理前后的样品进行变温PL谱的测量,发现湿法处理后发光增强是由于内量子效率的提高引起的。GaN nanorods were fabricated by ICP using Ni self-assembled nanodots as etching mask. The morphology was checked by scanning electron microscopy （ SEM） , and the optical property was characterized by the photoluminescence （ PL） spectra at room temperature. The PL intensity of GaN nanorods was enhanced about 2. 6 times compared to that of asgrown GaN films. Then, GaN nanorods were dipped into the KOH solution for 40 min in order to heal the etch damage. After the treatment, the PL intensity was enhanced again. The temperature-dependent PL was measured to estimate IQE. The results show that the enhancement of PL intensity is due to the higher IQE after the KOH treatment.

关 键 词：GaN纳米柱 KOH腐蚀 光致发光 内量子效率 

分 类 号：O472.3[理学—半导体物理] O482.31[理学—物理]