InN纳米薄膜制备及其结构与带隙分析  

The Preparation of In N Nano Thin Films and Analysis of the Structure and Optical Bandgap

作　　者：王金颖[1,2,3] 王炫力 袁浩然[1,2,3] 姚成宝[1,2,3] 孙文军[1,2,3] 

机构地区：[1]光电带隙材料教育部重点实验室 [2]黑龙江省先进功能材料与激发态重点实验室 [3]哈尔滨师范大学

出　　处：《哈尔滨师范大学自然科学学报》2015年第3期83-86,共4页Natural Science Journal of Harbin Normal University

基　　金：黑龙江省自然基金(F201202);黑龙江省教育厅骨干教师项目(125G031);黑龙江省研究生创新科研资金项目(No.YJSCX2011-414HLJ);The Natural Science Foundation of Heilongjiang Province under Grant(A201304)

摘　　要：以金属铟为靶材,蓝宝石为衬底,氩和氮的混合气体为溅射气体,衬底温度为100℃,溅射功率为100 W,采用射频磁控溅射技术分别制备了溅射压强为0.8、1.0、1.4 Pa的In N薄膜.利用XRD、SEM分析薄膜样品呈六方纤锌矿结构.使用双光束紫外/可见分光光度计测量薄膜的吸收谱,计算得到在溅射压强为0.8、1.0、1.4 Pa下制得的薄膜样品带隙分别为1.825、1.74、1.82 e V.结果表明溅射压强为1.0 Pa时,带隙值最小,结晶质量最好.InN films were deposited on sapphire substrates by RF magnetron sputtering with the RFsputtering power of 100 W and the substrate temperate of 100 ℃ in an ambient of argon and nitrogen, usingan indium target. The sputtering pressures were 0.8, 1.0, 1.4 Pa, respectively. The prepared films with awurtzite structure were confirmed by X -ray diffraction and scanning electron microscope. The absorptionspectrum of the prepared films was measured by a double beam UV / Visible spectrophotometer. The opticalbandgap of the prepared films in the corresponding sputtering pressures of 0.8, 1.0, 1.4 Pa were 1. 825,1.74, 1.82 eV, respectively. The results showed that the prepared film deposited at the pressure of 1Pa hadsmallest bandgap value and the best crystalline quality.

关 键 词：磁控溅射 溅射压强 INN 光学带隙 

分 类 号：O47[理学—半导体物理]